| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1519123 | Journal of Physics and Chemistry of Solids | 2007 | 5 Pages |
Abstract
In-situ characterisation of the n+-GaAs/HF:Et-OH interface is studied by current–voltage, J(V). The experimental current-potential exhibits the presence of three potential regions, which are attributed to different reaction mechanisms between HF and n+-type GaAs surface. Depending on HF concentration a current peak appears in the J(V) characteristics. Scanning electron microscopy (SEM) images of samples at different point of the J(V) characteristic exhibits different surface morphologies which depend strongly on the electrochemical anodization conditions.
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Authors
L. Beji, Z. Mazouz, A. Othmane, H. Ben Ouada,