Article ID Journal Published Year Pages File Type
1520283 Journal of Physics and Chemistry of Solids 2017 5 Pages PDF
Abstract
Ge-doped GaAs grown by vapor phase epitaxy was investigated by photoluminescence measurements between 1.8° and 20.3°K. Two bands caused by Ge-doping are found at about 1.476 and 1.480 eV. The bands are interpreted in terms of donor-acceptor recombination and free electron-acceptor transition. The binding energy of the acceptor is 42 ±1 meV.
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Photoluminescence of Ge-doped GaAs grown by vapor-phase epitaxy
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