Effect of sintering temperature on microstructures and microwave dielectric properties of Zn2SnO4 ceramics

The microwave dielectric properties of Zn2SnO4 ceramics were investigated with a view to the use of such ceramics in mobile communication. Zn2SnO4 ceramics were prepared using the conventional solid-state method with various sintering temperatures. Dielectric constants (εr) of 9.2-10.2 and unloaded quality factor (Qu × f) of 12,700-39,000 GHz were obtained at sintering temperatures in the range 1175-1250 °C for 4 h. A maximum relative density of 95.7% was obtained for Zn2SnO4 ceramic, sintered at 1225 °C for 4 h. A dielectric constant (εr) of 10.2, an unloaded quality factor (Qu × f) of 39,000 GHz, and a temperature coefficient of resonant frequency (τf) of −84 ppm/°C were obtained when Zn2SnO4 ceramics were sintered at 1225 °C for 4 h.