Bi4V2O11 and BITAVOX.20 coatings deposited by reactive magnetron sputtering

•Bi4V2O11 and BITAVOX.20 were synthesized by reactive magnetron co-sputtering.•Crystallization of the coatings was studied by X-ray diffraction in temperature.•High temperature γ form grows from a new type of intermediate phase.•The conductivity of Bi4V2O11 coatings was investigated by impedance spectroscopy measurements along the sample surface.

Bi4V2O11 and BITAVOX.20 films were deposited by magnetron sputtering in reactive conditions from Bi, V and Ta metallic targets. The influence of sputtering conditions on the films composition was studied and then a structural study at variable temperature was carried out. Before annealing, the films were amorphous and the γ-Bi4V2O11 structure was obtained for a treatment at temperatures over 550 °C whereas BITAVOX.20 started to crystallise at 425 °C. In both cases, crystallisation occurred via an intermediate fluorite phase presenting a tetragonal deformation as already observed for other compounds with the Aurivillius structure.