ZnO and copper indium chalcogenide heterojunctions prepared by inexpensive methods

Devices prepared with CISe and CISeS show a clear photo-response. The introduction of a buffer layer of TiO2 into the ZnO/chalcogenide interface was necessary to detect photocurrent. The presence of CISeS improves the response of the cell, with higher values of short circuit current density, open circuit potential and fill factor. These promising results show that it is possible to prepare photovoltaic heterojunctions by depositing chalcogenides onto porous ZnO substrates using low-cost solution-based techniques.