Fabrication and characterization of metal–semiconductor–metal photodetector based on porous InGaN

•In0.27Ga0.73N/GaN/AlN layers with an indium mole fraction of 0.27 have been epitaxially by PA-MBE.•Nanostructured porous film was synthesized using the UV-assisted electrochemical etching technique.•The fabricated MSM photodetector shows photovoltaic characteristics at the green region of the electromagnetic spectrum.•The sensitivity of the MSM photodetector is directly proportional to the applied bias.

In this study, the characteristics of metal–semiconductor–metal (MSM) photodetector based on a porous In0.27Ga0.73N thin film were reported. Nanostructured porous film was synthesized using the UV-assisted electrochemical etching technique. The formed pores were dissimilar in terms of shape and size. The effect of annealing in the range of 300–500 °C on Pt/In0.27Ga0.73N was investigated by I–V measurements. Schottky barrier height was at maximum value under 500 °C. The fabricated MSM photodetector shows photovoltaic characteristics in the green region of the electromagnetic spectrum. The device responsivity increased with increasing the bias voltage. Moreover, the rise and recovery times of the device were investigated at 10 mW cm−2 of a 550 nm chopped light. Finally, the sensitivity and quantum efficiency were also investigated.