| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1522153 | Materials Chemistry and Physics | 2014 | 5 Pages |
Abstract
The structural and electronic properties of the dominant intrinsic defect of the Cd vacancy (VCd) and the Cl impurity in CdTe are studied using density functional theory. VCd is calculated to be a shallow double acceptor. Cl will substitute Te site (ClTe) and then act as a shallow donor in CdTe. Moreover, ClTe can bond with VCd, forming the defect complexes of ClTe-VCd. ClTeâVCd is a shallower acceptor than that of VCd. The defect complexes of (ClTeâVCd)â1 can improve the p-doping behavior of CdTe.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Huiping Zhu, Mingqiang Gu, Lei Huang, Jianli Wang, Xiaoshan Wu,