Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1522155 | Materials Chemistry and Physics | 2014 | 6 Pages |
Abstract
It is well known that a TiC layer can be formed and should act as a buffer layer in diamond films deposited on Ti alloy. Through our cross-sectional investigation in HRTEM, a thin layer (20-30Â nm) was first identified between the outermost diamond film and the inner reactive TiC layer adjacent to the substrate. This layer consists of numerous crystalline nanoparticles with grain sizes of 5-20Â nm. Through electron nanodiffraction patterns combined with EDS and EELS analysis, these nanoparticles can be identified as a TiC1âxOx phase with a similar structure to cubic TiC. Besides, C atoms and O atoms in TiC1âxOx randomly occupy the vacancies of C in TiC. The thickness of this TiC1âxOx layer does not change significantly with increasing deposition time, and the diamond phase directly nucleates and grows on it.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
X.J. Li, Y.S. Li, L.L. He, Q. Yang, A. Hirose,