Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1522251 | Materials Chemistry and Physics | 2014 | 6 Pages |
Abstract
Diffusion controlled growth of the phases in Hf-Si and Zr-Si systems are studied by bulk diffusion couple technique. Only two phases grow in the interdiffusion zone, although several phases are present in both the systems. The location of the Kirkendall marker plane, detected based on the grain morphology, indicates that disilicides grow by the diffusion of Si. Diffusion of the metal species in these phases is negligible. This indicates that vacancies are present mainly on the Si sublattice. The activation energies for integrated diffusion coefficients in the HfSi2 and ZrSi2 are estimated as 394 ± 37 and 346 ± 34 kJ molâ1, respectively. The same is calculated for the HfSi phase as 485 ± 42 kJ molâ1. The activation energies for Si tracer diffusion in the HfSi2 and ZrSi2 phases are estimated as 430 ± 36 and 348 ± 34 kJ molâ1, respectively.
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Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Soumitra Roy, Aloke Paul,