Effects of ferroelectric-poling-induced strain on the electronic transport and magnetic properties of (001)- and (111)-oriented La0.5Ba0.5MnO3 thin films

We epitaxially grew La0.5Ba0.5MnO3 (LBMO) films on (001)- and (111)-oriented ferroelectric single-crystal substrates and reduced the in-plane tensile strain of LBMO films by poling the ferroelectric substrates along the 〈001〉 or 〈111〉 direction. Upon poling, a large decrease in the resistance and a considerable increase in the magnetization, Curie temperature, and magnetoresistance were observed for the LBMO film, which are driven by interface strain coupling. Such strain effects can be significantly enhanced by the application of a magnetic field. An overall analysis of the findings reveals that the mutual interaction between the strain and the magnetic field is mediated by the electronic phase separation which is sensitive to both strain and magnetic field. Our findings highlight that the electronic phase separation is crucial in understanding the electric-field-manipulated strain effects in manganite film/ferroelectric crystal heterostructures.