Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1522637 | Materials Chemistry and Physics | 2013 | 6 Pages |
Abstract
Hydrogenated silicon thin films deposited by VHF PECVD process for various silane flow rates have been investigated. The silane flow rate was varied from 5 sccm to 30 sccm, maintaining all other parameters constant. The electrical, structural and optical properties of these films were systematically studied as a function of silane flow rate. These films were characterized by Raman spectroscopy, Scanning Electron Microscopy (SEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectroscopy and UV-visible (UV-Vis) spectroscopy. Different crystalline volume fraction (22%-60%) and band gap (â¼1.58 eV-â¼1.96 eV) were achieved for silicon thin films by varying the silane concentration. A transition from amorphous to nanocrystalline silicon has been confirmed by Raman and FTIR analysis. The film grown at this transition region shows the high conductivity in the order of 10â4 Ωâ1 cmâ1.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Jhuma Gope, Sushil Kumar, S. Sudhakar, C.M.S. Rauthan, P.C. Srivastava,