Article ID Journal Published Year Pages File Type
1522736 Materials Chemistry and Physics 2013 4 Pages PDF
Abstract
► Pr-doped PbZrO3 antiferroelectric films prepared by chemical solution deposition. ► The Pr-doped thin films exhibit strong (111) orientation. ► Pr-doping results in large polarization and high energy storage density. ► Occupying site of Pr ions and high orientation play an important role.
Keywords
Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Structure and improved electrical properties of Pr-doped PbZrO3 antiferroelectric thin films with (111) preferential orientation
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