Article ID Journal Published Year Pages File Type
1522769 Materials Chemistry and Physics 2013 9 Pages PDF
Abstract
► A method to form isotropic textures on mc-Si wafers in KOH solution is presented. ► The method is based on anodic polarization of silicon in KOH at high potentials. ► Evolution of surface morphology is studied by varying the etch parameters. ► Isotropic textures with lowest average reflectivity are obtained at 40 V. ► A reaction model for texturing mechanism is discussed in the light of XPS data.
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Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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Electrochemical isotropic texturing of mc-Si wafers in KOH solution
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