Structural, morphological and electronic study of CVD SnO2:Sb films

We have prepared solid thin film samples of SnO2:Sb in different ratios using atmospheric pressure chemical vapour deposition technique APCVD. The chemical composition was determined with Rutherford Backscattering Spectroscopy (RBS) within an error of 1%. X-ray diffraction was used to study the influence of Sb concentration on the lattice parameters and preferred orientations. We have found that sample of concentration 4% showed a (200) preferred orientation. The AFM and SEM images showed that the surface roughness of our samples was influenced by the doping concentrations. The lowest electrical surface resistance was 8.0 Ω □−1 for a 3% concentration sample. We found that the contribution to the metallic state is influenced by oxygen vacancy and Sb doping. Also, the sample of good electrical conductive property has an optical gap of 3.60 eV band at room temperature.

► The thickness was a nonlinear function of the reaction time. ► Minimal value of 8.0 Ω □−1 for a 3% concentration and 3.60 eV energy gap. ► Surface morphology is dopant dependant.