Article ID Journal Published Year Pages File Type
1522992 Materials Chemistry and Physics 2012 6 Pages PDF
Abstract
► Optical study of strain-compensated GaAs0.64Sb0.36/GaAsxP1−x QW structures. ► PR and SPV spectra reveal type-I characteristic of GaAs0.64Sb0.36/GaAs0.79P0.21 QW. ► Strain compensation factor is used as a parameter for the theoretical calculation. ► Energy band of QW is changed by replacing GaAs barrier by GaAs0.79P0.21 layers.
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Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Optical characterization of a strain-compensated GaAs0.64Sb0.36/GaAs0.79P0.21 quantum well structure grown by metal organic vapor phase epitaxy
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