| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523007 | Materials Chemistry and Physics | 2012 | 6 Pages |
Abstract
InGaN materials grown by metalorganic chemical vapor deposition (MOCVD) using trimethylgallium (TMG) and triethylgallium (TEG) as alkyl source were compared. Ga-doped ZnO (GZO) films using radio frequency (RF) magnetron sputtering to feature Schottky contacts onto InGaN epitaxial layer with AlN or Mg-doped GaN in-situ capping layer were demonstrated. It is of great potential in application to high performance InGaN photosensors.
► InGaN materials grown by different alkyl source using metalorganic chemical vapor deposition. ► Ga-doped ZnO films deposited by radio frequency magnetron sputtering to feature Schottky contacts onto InGaN. ► In-situ capping technique improves performance of InGaN photosensors.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Kai-Hsuan Lee, Ping-Chuan Chang, Shoou-Jinn Chang, Yan-Kuin Su, San-Lein Wu, Manfred Pilkuhn,