| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523050 | Materials Chemistry and Physics | 2012 | 5 Pages |
Abstract
⺠The ZnO:Al TTFTs inserted ZnO buffer layer were deposited using a RF magnetron cosputter system. ⺠Better crystalline quality of the ZnO:Al channel layer was obtained by inserting the ZnO buffer layer. ⺠The improvement of electronic characteristics is attributed to by using the releasing functions of the inserted ZnO buffer layer.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yung-Hao Lin, Hsin-Ying Lee, Ching-Ting Lee, Cheng-Hsu Chou,