Article ID Journal Published Year Pages File Type
1523114 Materials Chemistry and Physics 2012 9 Pages PDF
Abstract
► Threshold filament temperature for successive growth of SiNWs is between 1400−1500 °C. ► Catalytic effect of indium particles is enhanced by removes their native oxide layer. ► Growth rate of SiNWs is related to the desorption rate of Si radicals. ► Increase in filament temperature can improve the crystallinity of the SiNWs.
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Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
Preview
Study on the role of filament temperature on growth of indium-catalyzed silicon nanowires by the hot-wire chemical vapor deposition technique
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