| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523137 | Materials Chemistry and Physics | 2012 | 4 Pages |
Abstract
⺠Success synthesis of two bilayers of Ru/N-unsaturated and N-supersaturated TaN. ⺠RuN exists in Ru/N-supersaturated TaN after annealing at 650 °C. ⺠Ru/N-supersaturated TaN exhibits high thermal stability. ⺠N effusion from TaN underlayer is responsible for the high thermal stability.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
L. Wang, Z.H. Cao, K. Hu, Q.W. She, X.K. Meng,