| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523254 | Materials Chemistry and Physics | 2012 | 6 Pages |
Durian-like gallium nitride (GaN) microstructures were successfully synthesized on Si substrate by pre-treating Ga metal with aqueous NH3 via catalyst assisted chemical vapor deposition (CVD) method at 1200 °C. The as-synthesized product was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX). XRD and EDX analysis revealed that durian-like GaN is pure and single phase. SEM results showed that the size of the durian-like GaN structures was 20–25 μm. GaN microstructures exhibited reasonable field emission properties with the turn-on field of 8.24 V μm−1 (0.01 mA cm−2) and threshold field of 10.18 V μm−1 (1 mA cm−2) which is sufficient for applications of electron emission devices, field emission displays and vacuum micro-electronic devices. Photoluminescence (PL) properties of durian-like GaN studied at room temperature showed a strong near-band-edge emission at 369.4 nm (3.36 eV) whereas at low temperature it showed near-band-edge emission at 364.2 nm (3.4 eV) without yellow band emissions. The photoluminescence properties showed that it has also potential application in light-emitting devices.
Graphical abstractFigure optionsDownload full-size imageDownload as PowerPoint slideHighlights► Durian-like GaN with size of 20–25 μm have been synthesized by CVD method. ► FE properties show turn-on field of 8.24 V μm−1 and threshold field of 10.18 V μm−1. ► This turn-on field value is enough for potential use in electron emission devices. ► Strong PL emission peak at 369.4 nm show its vast applications in LEDs and devices. ► Low temperature (77 K) PL showed strong emission peak at 364.2 nm.
