| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523283 | Materials Chemistry and Physics | 2012 | 4 Pages |
This work deals with the investigation of the phase formation in thin film systems corresponding to the Al10Cu10Fe phase composition. The samples were prepared by sputtering at room temperature. They were subsequently characterized using in situ resistance measurements, and in situ X-ray diffraction measurements from room temperature up to 600 °C. The first reaction occurs at the Al/Cu interface. The iron starts to take part into the phase formation for temperatures higher than 400 °C. At the end of the heat treatment, the sample is constituted of Al10Cu10Fe, only. This result is in agreement with the stable phase at the temperature of interest corresponding to the nominal composition of the sample.The activation energy of the phase formation of Al10Cu10Fe was determined from the in situ resistance measurements both by using simulation and Kissinger's method. Resistivity value of the Al10Cu10Fe phase was also determined at room temperature.
► In this study we investigated the phase formation of ϕ-Al10Cu10Fe in thin films. ► We characterized the samples by in situ X-ray diffraction, and resistance measurements. ► We determined the activation energy of Al10Cu10Fe. ► We measured the resistivity of the φ-Al10Cu10Fe phase at room temperature.
