| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523293 | Materials Chemistry and Physics | 2012 | 5 Pages |
Abstract
⺠High activation efficiency of 5% and smooth surface with Rrms of 0.72 nm was achieved in p-GaN films. ⺠Low density of MgGa-VN complexes and screw-type dislocations in the 50 mbar growth of p-GaN films. ⺠The acceptor activation energy and the compensation ratio were â¼151 meV and â¼10%, respectively.
Related Topics
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Authors
Wen-Cheng Ke, Shuo-Jen Lee, Shiow-Long Chen, Chia-Yu Kao, Wei-Chung Houng,