| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523303 | Materials Chemistry and Physics | 2012 | 7 Pages |
Abstract
⺠Epitaxial LiCoO2 thin films were formed on the Al2O3 (0 0 0 1) substrate by PLD at room temperature and annealed at 600 °C in air. ⺠The orientation relationship between film and substrate is revealed. ⺠Crystalline phases in the RT deposited and annealed thin films are clearly identified. ⺠Atomic level interface structure indicates an interface reaction during annealing. ⺠A phase transition mechanism from fully disordered LiCoO2 to fully ordered LiCoO2 is proposed.
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Authors
Rong Huang, Taro Hitosugi, Craig A.J. Fisher, Yumi H. Ikuhara, Hiroki Moriwake, Hideki Oki, Yuichi Ikuhara,