| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523390 | Materials Chemistry and Physics | 2013 | 6 Pages |
Abstract
⺠CuInAlSe2 (CIAS) thin films deposited using flash evaporation at different substrate temperatures. ⺠XRD shows single phase, polycrystalline in nature of CIAS thin films and the surface with the dense grains observed by SEM. ⺠Optical band gap is in the range of 1.20 eV-1.38 eV and the absorption coefficient is close to 105 cmâ1. ⺠Electrical characterization reveals p-type conductivity with good carrier mobility of â¼10 cm2 V sâ1. ⺠Observed properties indicates potential use of CIAS thin films as an absorber layer in thin film solar cell.
Keywords
Related Topics
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Materials Science
Electronic, Optical and Magnetic Materials
Authors
Usha Parihar, K. Sreenivas, J.R. Ray, C.J. Panchal, N. Padha, Bharati Rehani,