| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523463 | Materials Chemistry and Physics | 2012 | 4 Pages |
Abstract
⺠Doping of Al onto the Si sites causes a decrease in the electrical resistivity. ⺠Low-temperature lattice thermal conductivity reduces with increasing Al content. ⺠Variation of the Seebeck coefficient is understood as the hole-doping effect.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Y.K. Kuo, C.S. Lue, G. Hsu, J.Y. Huang, H.L. Hsieh,