| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523507 | Materials Chemistry and Physics | 2011 | 7 Pages |
Abstract
⺠Annealing effects on the electrical and structural properties of Ru/Pd/n-GaN SBDs are studied. ⺠The optimum annealing temperature for Pd/Ru Schottky contact is 300 °C. ⺠Increase in SBH upon annealing at 300 °C could be attributed to the formation of gallide phases. ⺠The overall surface morphology of the Pd/Ru Schottky contacts on n-GaN is fairly smooth.
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Materials Science
Electronic, Optical and Magnetic Materials
Authors
N. Nanda Kumar Reddy, V. Rajagopal Reddy, Chel-Jong Choi,