| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523643 | Materials Chemistry and Physics | 2012 | 6 Pages |
Abstract
⺠Effects of light and heavy ion irradiation on the MOCVD grown GaN. ⺠Analysis using the micro Raman spectra of pristine and ions irradiated GaN. ⺠Deducing biaxial stress (Ï), carrier concentration (n) and phonon life-time (Ï) from the Raman shift.
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Authors
S. Munawar Basha, K. Asokan, P. Sangeetha, V. Ramakrishnan, J. Kumar,