| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523675 | Materials Chemistry and Physics | 2012 | 6 Pages |
Abstract
⺠Fe and N ions were co-implanted into Si wafers using ion implantation technique. ⺠XAFS characterized the local micro-structure of Fe atoms in the samples. ⺠The samples with the high doses showed room-temperature ferromagnetism. ⺠The ferromagnetism originated from the substituted Fe ions embedded in the Si matrix.
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Authors
Li Wang, Weixia Gao, Denglu Hou, Yuchan Hu, Qian Zhang, Li Ma, Congmian Zhen, Fengchun Hu, Chao Wang,