Mechanism and characterizations studies of resistive switching effects on a thin FeOx-transition layer of the Ti/TiN/SiO2/FeOx/FePt structure by thermal annealing treatments

We investigated annealing effects on the bipolar resistive switching characteristics and mechanism of the thin FeOx transition layer in a Ti/TiN/SiO2/FeOx/FePt structure by depositing a plasma-enhanced tetraethyl orthosilicate oxide onto the Fe-contented electrode. The electrical results show that the values of operation voltage, variation of electrical parameters and retention properties could be improved with the increasing thermal treatment budget. Tunneling electron microscope, X-ray diffraction, Auger electron spectroscopy and X-ray photon-emission spectra depth profiles were examined for cross-section image, crystallinity and composition analyses of the transition layer. In order to investigate the resistive switching mechanism and characterizations in Ti/TiN/SiO2/FeOx/FePt structure, the electrical parameters were extracted during set and reset process. The retention property at room temperature and 85 °C was improved after the thermal treatment and maintains both resistance states over 6 × 104 s implies promising potential for future memory application.

► Thermal annealing effects could change electrical and material properties in the transition iron-oxide layer of the Ti/TiN/SiO2/FeOx/FePt structure. ► Annealing effects could improve electrical characteristics, such as bipolar switching behaviors (set and reset process) and retention reliability. ► Statistics of the electrical parameters could be investigated to understand the mechanism and characterizations of iron-oxide resistive switching effect. ► The retention reliability of iron-oxide resistive switching memory could be improved by the optimized annealing condition.