| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1523939 | Materials Chemistry and Physics | 2011 | 12 Pages |
Abstract
⺠Process parameters to control hot-wire CVD of WO3âx are categorized. ⺠Growth time, oxygen partial pressure, filament and substrate temperature are varied. ⺠Chemical and crystal structure, optical bandgap and morphology are determined. ⺠Oxygen partial pressure determines the deposition rate up to as high as 36 μm minâ1. ⺠Nanostructures, viz. wires, crystallites and closed crystallite films, are controllably deposited.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Z. Silvester Houweling, John W. Geus, Michiel de Jong, Peter-Paul R.M.L. Harks, Karine H.M. van der Werf, Ruud E.I. Schropp,