| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1524013 | Materials Chemistry and Physics | 2012 | 6 Pages |
Abstract
⺠The side-functional moieties of pBVMA regularly arranged in film state. ⺠The device exhibits volatile memory behavior with an ON/OFF current ratio up to 105. ⺠The film thickness has nothing to do with the device's memory behavior. ⺠Physical theoretical models and molecular simulation supported the memory mechanism.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Dong Wang, Hua Li, Najun Li, Ying Zhao, Qianhao Zhou, Qingfeng Xu, Jianmei Lu, Lihua Wang,