| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1524113 | Materials Chemistry and Physics | 2012 | 14 Pages |
Abstract
⺠Zr-oxynitride as the gate oxide deposited on 4H-SiC substrate. ⺠Simultaneous oxidation and nitridation of sputtered Zr thin film on 4H-SiC using various concentrations of N2O gas. ⺠Presence of interfacial layer comprised of mixed compounds related to Zr-O, Zr-N, Zr-O-N, Si-N, and/or C-N. ⺠The highest electrical breakdown and highest reliability at diluted N2O of 10%.
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Authors
Yew Hoong Wong, Kuan Yew Cheong,