Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1524114 | Materials Chemistry and Physics | 2012 | 10 Pages |
Abstract
⺠3 nm Al4Cu9 are found in sample prepared with Forming Gas ON. ⺠15 nm mixed CuAl + CuAl2 are found in sample prepared with Forming Gas OFF. ⺠Voids are present at the bonding interfaces of both samples. ⺠Both samples have similar ball shear strength. ⺠Estimated interfacial temperature of as-bonded Forming Gas ON sample â¼437 °C.
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
T. Joseph Sahaya Anand, Chua Kok Yau, Lim Boon Huat,