| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1524126 | Materials Chemistry and Physics | 2012 | 8 Pages |
Abstract
⺠Highly-doped TiO2:N films have been grown by reactive pulsed magnetron sputtering. ⺠The electronic structure has been assessed by XANES and high-resolution XPS. ⺠N incorporation favors the formation of anatase structures and narrows the band-gap. ⺠The spectroscopic data evidence the role of N interstitials in the form of NOx complexes.
Related Topics
Physical Sciences and Engineering
Materials Science
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Authors
R. Gago, A. Redondo-Cubero, M. Vinnichenko, J. Lehmann, F. Munnik, F.J. Palomares,