| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1524216 | Materials Chemistry and Physics | 2012 | 5 Pages |
Abstract
⺠The effect of a thin gate thermal oxide layer on device performance is demonstrated. ⺠The device mechanism is discussed by energy band and physical insight. ⺠Drain current and gate voltage swing increase with a thin gate thermal oxide layer. ⺠The relatively thin gate thermal oxide enables the drain current could not pinch off.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Jung-Hui Tsai,