Electrical behavior of Pb(Zr0.52Ti0.48)0.5(Fe0.5Nb0.5)0.5O3 ceramics

► 0.5PZT + 0.5PFN can be an ideal compound for devising functional dielectric properties. A large value of dielectric constant and low value of value of dissipation factor (tan δ), with good insulating properties made the sample for prospective applications in microwave dielectric components and high-power-density capacitors. ► The higher diffusivity (γ ∼ 1.6) value of the dielectric peak in the material indicates the greater disordering in the system. ► The different conduction mechanisms at (a) lower temperature due to (i) trapped electron, and (ii) polaron, and (b) high temperature because of oxygen vacancy are observed in the system. ► The presence of defect (oxygen vacancy) in the system modifies the local field in the crystal system which affects the dynamic polarization of the system and produce asymmetric P-E hysteresis loop.