| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1524320 | Materials Chemistry and Physics | 2011 | 5 Pages |
Ce-doped CdO thin films with different Cd compositions were prepared on glass and Si wafer substrates by a vacuum evaporation technique. The effects of Ce doping on the structural, electrical, and optical properties of the host CdO films were systematically studied. The X-ray diffraction study shows that some of Ce4+ ions substituted for Cd2+ and the solubility of Ce in CdO is very limited and may be around ∼1.3 at%. The cerium doping influences all optoelectrical properties of CdO. The bandgap of Ce-doped CdO suffers narrowing by about 27% with a small (0.5 at%) doping level. The electrical behaviours show that all the prepared Ce-doped CdO films are degenerate semiconductors. Their dc-conductivity, carrier concentration and mobility increase compare with undoped CdO film. The largest mobility of 66.7 cm2 V−1 s was observed for 3.8% Ce-doped CdO film. From transparent-conducting-oxide point of view, Ce is sufficiently effective for CdO doping.
► In the present work, it was measured the effects of Ce doping on the structural, electrical, and optical properties of the host CdO films. ► The bandgap of 0.5 at% Ce-doped CdO suffers narrowing by about 27%. ► The dc-conductivity, carrier concentration and mobility increase compare with undoped CdO film. ► From TCO point of view, Ce is sufficiently effective for CdO doping.
