| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1524352 | Materials Chemistry and Physics | 2011 | 6 Pages |
Abstract
⺠Enhanced growth of periodic arrays of low-resistivity CoSi2 nanodots on (0 0 1)Si0.7Ge0.3 has been achieved by using a novel Co/amorphous-Si(a-Si) bilayer nanodot structure. ⺠The formation temperature of CoSi2 nanodots was significantly lowered by at least 300 °C compared to what is usually needed for the growth of blanket CoSi2 films on Si1âxGex substrates. ⺠The presence of the a-Si interlayer could effectively prevent Ge segregation and maintain the interface stability in forming CoSi2 nanodots on Si0.7Ge0.3 substrate.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
S.L. Cheng, C.Y. Yang, S.W. Lee, H.F. Hsu, H. Chen,