| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1524624 | Materials Chemistry and Physics | 2011 | 5 Pages |
We report a new bubble-assisted growing and etching method for constructing ZnO nanowire (NW) arrays with cavity tops. Firstly, a ZnO NW array structure was formed on a ZnO-seed-layer-patterned Si substrate by combining e-beam lithography and a wet chemical method. Secondly, a new kind of ZnO NW array with cavity tops could be formed by a subsequent bubble-assisted growing and etching. These ZnO NW array structures with different morphologies exhibited different photoluminescence properties, showing their potential applications in lasing cavities, stimulated emitters, nanogenerator, photocatalysis and light-emitting diodes. The bubble-assisted etching method will open a new door for morphology design of ZnO and other semiconductor nanowire arrays at special sites.
► ZnO NW array structure was formed on a ZnO-seed-layer-patterned Si substrate. ► Both e-beam lithography and a wet chemical method were employed. ► A bubble-assisted method was used for constructing ZnO nanowire arrays with cavity tops. ► ZnO NW array structures with different morphologies exhibited different photoluminescence properties.
