Microwave dielectric properties of La1−xBix(Mg0.5Sn0.5)O3 ceramics

► The effects of the degrees of Bi3+ substitution and sintering temperature on the microwave dielectric properties of La1−xBix(Mg0.5Sn0.5)O3 ceramics were studied. ► La0.97Bi0.03(Mg0.5Sn0.5)O3 ceramics that were sintered at 1550 °C for 4 h had an apparent density of 6.50 g cm−3, a dielectric constant of 20.2, a Q × f of 58,100 GHz, and a temperature coefficient of resonant frequency (τf) of −84.2 ppm °C−1. ► The microwave dielectric properties of La1−xBix(Mg0.5Sn0.5)O3 ceramics depended strongly on the degrees of Bi3+ substitution, apparent density, and microstructures.