Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1524887 | Materials Chemistry and Physics | 2011 | 5 Pages |
Transient phase change crystallization process of SiSb phase change thin films under the irradiation of picosecond (ps) laser pulse was studied using time-resolved reflectivity measurements. The ps laser pulse-crystallized domains were characterized by atomic force microscope, Raman spectra and ellipsometrical spectra measurements. A reflectivity contrast of about 15% can be achieved by ps laser pulse-induced crystallization. A minimum crystallization time of 11 ns was achieved by a low-fluence single ps laser pulse after pre-irradiation. SiSb was shown to be very promising for fast phase change memory applications.
► We reported crystallization dynamics of a novel SiSb phase change material. ► We measured optical constants of as-deposited and irradiated SiSb areas. ► Optical properties of as-deposited and irradiated SiSb thin film were compared. ► Crystallization of irradiated SiSb was confirmed by using AFM and micro-Raman spectra. ► The heat conduction effect of lower metal layer of multi-layer films was studied.