Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1525094 | Materials Chemistry and Physics | 2010 | 6 Pages |
Abstract
Nano-scale higher manganese silicide (MnSi1.7) film with thickness of about 27 nm is prepared by thermal annealing of a bi-layer Si/MnSix (x < 1.7) at 650 °C. When the thermal annealing time is 25 min, the film is p-type from 300 K to 633 K. By increasing the thermal annealing time to 65 min, the film is still p-type around room temperature but transforms to n-type at high temperatures. The thermoelectric powers at 300 K and 633 K are +116 μV Kâ1 and â321 μV Kâ1, respectively. With addition of enough iron to the film, n-type MnSi1.7 film with lower electrical resistivity is obtained. The thermoelectric power reaches to â568 μV Kâ1 at 533 K. As a result, the thermoelectric power factor of the nano-scale n-type MnSi1.7 film at 533 K is 3.6 Ã 10â3 W mâ1 Kâ2. This value is greater than that of p-type bulk MnSi1.7 materials.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Q.R. Hou, W. Zhao, Y.B. Chen, Y.J. He,