Article ID Journal Published Year Pages File Type
1526360 Materials Chemistry and Physics 2009 4 Pages PDF
Abstract

Thin films of cadmium oxide (CdO) doped with 1.5 wt pct samarium were prepared by a vacuum evaporation on glass and Si wafer substrates. The prepared films were annealed in nitrogen gas at 200 °C, 250 °C, and 300 °C and characterised by the X-ray fluorescence and diffraction. It was observed that the N-annealing of CdO:Sm films has no a considerable effect on their CdO cubic crystalline parameters, crystallinity, and energy gap. However, the electrical measurements show that CdO:Sm is an n-type degenerate semiconductor and the nitridation increases its conductivity and carrier concentration. These results were explained according to the available models. In general, the low-temperature nitridation is a useful complementary operation for the production a better transparent conducting oxide TCO.

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Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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