Electrical properties of GeSeTl thin films deposited by e-beam evaporation technique

Five compositions of Ge14Se86−xTlx (x = 20%, 22%, 23.5%, 26.8%, and 28%) are prepared using the melt-quenching technique. Thin films of thickness d = 15, 30, 60, 90, 120, and 180 nm were deposited using electron-beam evaporation technique. All the films showed a non-Ohmic behavior. At higher range of ambient temperature, the activation energy ΔEσ was studied as a function of the coordination number r, average number of constraints Ncos and heat of atomization Hs. Mott's parameters of the system Ge14Se86−xTlx were studied at lower range of temperature. The effect of annealing temperature Tann on the activation energy was taken in consideration.