Au-induced crystallization of hydrogenated amorphous Si1−xGex (0.2 ≤ x ≤ 1) thin films with chemical source at low temperature

Au-induced crystallization of hydrogenated amorphous silicon–germanium thin films with chemical source (Au solution) at a low temperature (∼400 °C) has been investigated. The structure and morphology of the samples were characterized with X-ray diffraction, Raman spectra and scanning electron microscopy. The effects of annealing temperature and the Ge fraction on the Raman spectra were analyzed. The Raman shifts of Ge–Ge and Si–Ge peaks with the Ge fraction were also discussed. It was shown that Au solution significantly promotes the crystallization of the films at low temperature.