| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1527182 | Materials Chemistry and Physics | 2008 | 4 Pages |
Single crystals of CuInS2 were prepared by chemical vapor transport (CVT) technique. The crystals were characterized structurally by X-ray diffraction and compositionally by microprobe analysis. Measurements of the electrical conductivity and Hall effect were carried out in a wide temperature range (130–580 K). From these measurements the conductivity of the crystals was p-type. The electrical conductivity, Hall mobility and hole concentration at 300 K were found to be about 5 × 10−3 Ω−1 cm−1, 400 cm2 v−1 s−1 and 7.1 × 1012 cm−3, respectively. The energy gap was found to be 1.51 eV. Also, the present investigation involves the thermoelectric power measurements in temperature range (130–540 K). The combination of the electrical and thermoelectric power measurements in the present investigation makes it possible to find various physical parameters.
