Article ID Journal Published Year Pages File Type
1527233 Materials Chemistry and Physics 2007 4 Pages PDF
Abstract

Visible-light-driven TiN thin films with (1 1 1) preferred orientation were deposited on monocrystalline (1 0 0) silicon wafer by a cathodic arc technique. Properties of the sample were identified by XRD, AFM and UV–vis absorption spectrum. The TiN film is a novel photocatalyst having not only a narrow band gap (ca. 2.0 eV) corresponding to the visible light absorption, but also a sufficient potential for H2 evolution from the reduction of H+ in water, representing one of novel photocatalyst candidates for continuous hydrogen evolution from water decomposition using solar energy. It was suggested that the semiconductivity and photocatalytic properties of the prepared TiN thin film resulted from the feature of preferred orientation.

Related Topics
Physical Sciences and Engineering Materials Science Electronic, Optical and Magnetic Materials
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