Article ID | Journal | Published Year | Pages | File Type |
---|---|---|---|---|
1527510 | Materials Chemistry and Physics | 2006 | 4 Pages |
Abstract
The reaction of cubic gallium arsenide (GaAs) with ammonia yielded gallium nitride (GaN). Powder X-ray diffraction patterns of the GaN products showed that they are a mixture of c- and w-GaN, while their Ga MAS NMR spectra revealed that they have the other phase of GaN besides c- and w-GaN and the high reaction temperature (≥900 °C) induces nitrogen deficiency in GaN. The peaks at 353 and 347 ppm in the 71Ga MAS NMR spectra were tentatively assigned to c-GaN and an intermediate of w- and c-GaN in the stacking order, respectively. The observed 71Ga chemical shifts of GaN, GaP, GaAs and GaSb in cubic phase were well correlated with the reciprocal of their band gaps.
Keywords
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Woo-Sik Jung, Oc Hee Han, Seen-Ae Chae,