| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1527726 | Materials Chemistry and Physics | 2006 | 5 Pages |
Abstract
The sintering behavior, microstructure and microwave dielectric properties of BiNb1−xMoxO4 (x = 0.005, 0.01, 0.03 and 0.05) ceramics have been investigated. The phase-forming temperature (from orthorhombic to triclinic phase) of BiNb1−xMoxO4 ceramics during sintering is lower than that (1024 °C) of BiNbO4 ceramics. The variations of dielectric constant, Q value and temperature coefficient of resonant frequency are also investigated. A defect dipole model is proposed for the explanation of dielectric behavior of MoO3-doped BiNbO4 ceramics.
Related Topics
Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Yu Mao, Shi-Hua Ding, Xi Yao, Liang-Ying Zhang,