| Article ID | Journal | Published Year | Pages | File Type |
|---|---|---|---|---|
| 1527781 | Materials Chemistry and Physics | 2006 | 4 Pages |
Abstract
Silicon carbon nitride (SiCN) cone arrays were synthesized on Si wafers using a microwave plasma chemical vapor deposition reactor with gas mixtures of CH4, SiH4, Ar, H2 and N2 as precursors. The SiCN cones have nanometer-sized tips and their roots vary from nanometers to micrometers in sizes. A lowest turn-on field of 0.6 V μm−1 as well as field emission current densities of 4.7 mA cm−2 at an applied field of 2.8 V μm−1 was obtained from these SiCN cones. Moreover, the SiCN cone arrays exhibited rather stable emission current under constant applied voltage.
Keywords
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Physical Sciences and Engineering
Materials Science
Electronic, Optical and Magnetic Materials
Authors
Cheng Wenjuan, Lin Fangtin, Shi Wangzhou, Ma Xueming, Shen Dezhong, Zhang Yang,